PART |
Description |
Maker |
IPI100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 SP |
OptiMOST Power-Transistor OPTIMOS⑶-T POWER-TRANSISTOR OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
IPI25N06S3L-22 IPB25N06S3L-22 IPP25N06S3L-22 SP000 |
OptiMOS?-T Power-Transistor OPTIMOS⑶-T POWER-TRANSISTOR OptiMOS㈢-T Power-Transistor OptiMOST Power-Transistor
|
Infineon Technologies AG
|
SPA11N60C2 SPB11N60C2 SPP11N60C2 |
Cool MOS?/a> Power Transistor for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS??Power Transistor Cool MOS⑩ Power Transistor Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
|
INFINEON[Infineon Technologies AG]
|
SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
CEN-U01BA CEN-U51BA CEN-U95 2N6548 2N6549 2N6552 2 |
Leaded Power Transistor Darlington Leaded Power Transistor General Purpose Power Transistors POWER TRANSISTOR, TO-202 Power Transistors 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-202 Power Transistors 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-202 Power Transistors 2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-202 Power Transistors 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-202 Power Transistors 2 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-202
|
http:// CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp. Central Semiconductor, Corp.
|
2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola AMERICAN MICROSEMICONDUCTOR INC
|
SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3 |
Cool MOS?/a> Power Transistor Cool MOS??Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
|
INFINEON[Infineon Technologies AG]
|
SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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INFINEON[Infineon Technologies AG]
|
2SB1186A 2SD1763A 2SB1569 2SB1569A 2SD2400A 2SB123 |
POWER TRANSISTOR 功率晶体 Power Transistor (-160, -1.5A) From old datasheet system 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-220FN
|
Rohm Co., Ltd. ROHM[Rohm]
|
2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
IPB091N06NG IPP091N06NG |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|